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GS66502B-MR - GaN Systems

Description: 650V, 7.5A, Enhancement mode GaN Transistor, GaNPX® package, Bottom-side cooled

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GS66502B-MR - GaN Systems - PCB symbol
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GS66502B-MR - GaN Systems PCB footprint - Other - Other - GS66502B-MR
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GS66502B-MR Details

  • Manufacturer Part Number:

    GS66502B-MR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    0.5 pF

  • JESD-30 Code:

    R-PBCC-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66502B-MR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design and layout guidelines in their application notes and evaluation boards. It's recommended to follow these guidelines to ensure optimal thermal performance and minimize parasitic inductance.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan or liquid cooling system. Monitor the device's temperature and adjust the cooling system accordingly.
  • GaN Systems provides recommended gate drive circuits and layout guidelines in their application notes. It's essential to follow these guidelines to minimize ringing, ensure proper switching, and prevent electromagnetic interference (EMI).
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and follow proper ESD handling and storage procedures. GaN Systems also recommends using a TVS diode for ESD protection.
  • Follow the recommended operating conditions and derating guidelines outlined in the datasheet. GaN Systems also provides application notes and reliability reports to help ensure high-reliability operation.

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GS66502B-MR Overview

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GS66502B-MR Alternates

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Part Image GS66502B-E01-MR GaN Systems

Power Field-Effect Transistor, 7.5A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET