GS66502B-TR - GaN Systems

GS66502B-TR Details

• Manufacturer Part Number:

  GS66502B-TR

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Transferred

• ECCN Code:

  EAR99

• Manufacturer:

  GaN Systems

• Case Connection:

  SOURCE

• Configuration:

  SINGLE

• DS Breakdown Voltage-Min:

  650 V

• Drain Current-Max (ID):

  7.5 A

• Drain-source On Resistance-Max:

  0.26 Ω

• FET Technology:

  HIGH ELECTRON MOBILITY

• Feedback Cap-Max (Crss):

  0.5 pF

• JESD-30 Code:

  R-PBCC-N3

• JESD-609 Code:

  e4

• Moisture Sensitivity Level:

  3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  CHIP CARRIER

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  15 A

• Surface Mount:

  YES

• Terminal Finish:

  GOLD OVER NICKEL

• Terminal Form:

  NO LEAD

• Terminal Position:

  BOTTOM

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  GALLIUM NITRIDE