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GS66516T-TR - GaN Systems

Description: 650V, 60A, Enhancement mode GaN Transistor,  GaNPX® package, Top-side cooled

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GS66516T-TR - GaN Systems PCB footprint - Other - Other - GS66516T-TR
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GS66516T-TR - GaN Systems  - 3D model - Other - GS66516T-TR
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GS66516T-TR Details

  • Manufacturer Part Number:

    GS66516T-TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    ROHS COMPLIANT PACKAGE-4

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    5.9 pF

  • JESD-30 Code:

    R-PDSO-N4

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Surface Mount:

    YES

  • Terminal Finish:

    GOLD OVER NICKEL

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS66516T-TR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide and thermal design guidelines in their application notes. It's recommended to follow these guidelines to ensure optimal thermal performance and minimize parasitic inductance.
  • Ensure proper thermal management by providing adequate heat sinking, using a thermal interface material, and keeping the device within the recommended operating temperature range. Also, implement over-temperature protection and monitoring in your design.
  • GaN Systems provides recommended gate drive circuits and layout considerations in their application notes. It's essential to follow these guidelines to ensure proper switching, minimize ringing, and prevent electromagnetic interference (EMI).
  • To optimize the device for high-frequency operation, minimize the layout's parasitic inductance, use a low-inductance package, and ensure proper decoupling and bypassing. Additionally, consider using a GaN Systems' recommended evaluation board as a reference design.
  • GaN Systems performs rigorous reliability and qualification tests, including high-temperature operating life (HTOL), temperature cycling, and electrostatic discharge (ESD) testing, to ensure the device meets industry standards for reliability and robustness.

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