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GT20G101 - Toshiba

Description: INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT, 130A,8V,−55~150°C

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PCB Footprints
GT20G101 - Toshiba PCB footprint - Other - Other - 2-10S1C
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3D Models
GT20G101 - Toshiba  - 3D model - Other - 2-10S1C
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GT20G101 Details

  • Manufacturer Part Number:

    GT20G101

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    2-10S1C, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    6000 ns

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    25 V

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    60 W

  • Power Dissipation-Max (Abs):

    60 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    500 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    GENERAL PURPOSE SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    8 V

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GT20G101 Overview

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