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GT25J101 - Toshiba

Description: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT 209.48 Kbytes

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PCB Footprints
GT25J101 - Toshiba PCB footprint - Other - Other - GT25J101-6
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3D Models
GT25J101 - Toshiba  - 3D model - Other - GT25J101-6
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GT25J101 Details

  • Manufacturer Part Number:

    GT25J101

  • Part Life Cycle Code:

    Obsolete

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Additional Feature:

    HIGH SPEED

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    25 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    350 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    150 W

  • Power Dissipation-Max (Abs):

    150 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    600 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    500 ns

  • Turn-on Time-Nom (ton):

    400 ns

  • VCEsat-Max:

    4 V

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GT25J101 Overview

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