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GT60M303(Q) - Toshiba

Description: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

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PCB Footprints
GT60M303(Q) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-21F2C
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3D Models
GT60M303(Q) - Toshiba  - 3D model - Transistor Outline, Vertical - 2-21F2C
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GT60M303(Q) Details

  • Manufacturer Part Number:

    GT60M303(Q)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    2-21F2C, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    900 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    400 ns

  • Gate-Emitter Voltage-Max:

    25 V

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Rise Time-Max (tr):

    600 ns

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    600 ns

  • Turn-on Time-Nom (ton):

    460 ns

GT60M303(Q) Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The thermal pad should be connected to the ground plane to improve heat dissipation.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • Handle the device in an ESD-controlled environment, wear an ESD strap, and use ESD-safe packaging and tools to prevent damage. Avoid touching the device's pins or leads.
  • The GT60M303(Q) is a commercial-grade device and may not meet the requirements for high-reliability or aerospace applications. Consult with Toshiba or a qualified reliability engineer to determine suitability.
  • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10 ohms and 100 ohms, but simulation and experimentation may be necessary to determine the optimal value.

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