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H11D1SR2M - onsemi

Description: DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage; H11D1M, BVCEO= 300 V; MOC8204M, BVCEO= 400 V; H11D3M, BVCEO= 200 V; UL1577, 4,170 VACRMS for 1 Minute; High Voltage:; Safety and Regulatory Approvals:

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H11D1SR2M - onsemi - PCB symbol
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H11D1SR2M - onsemi PCB footprint - Other - Other - H11D1SR2M-3
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H11D1SR2M Details

  • Manufacturer Part Number:

    H11D1SR2M

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PDIP-6

  • Manufacturer Package Code:

    646BY

  • Country Of Origin:

    Thailand

  • HTS Code:

    8541.40.80.00

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    UL APPROVED

  • Coll-Emtr Bkdn Voltage-Min:

    300 V

  • Configuration:

    SINGLE

  • Current Transfer Ratio-Min:

    20%

  • Dark Current-Max:

    100 nA

  • Forward Current-Max:

    0.08 A

  • Forward Voltage-Max:

    1.5 V

  • Isolation Voltage-Max:

    7500 V

  • JESD-609 Code:

    e3

  • Mounting Feature:

    SURFACE MOUNT

  • Number of Elements:

    1

  • On-State Current-Max:

    0.1 A

  • Operating Temperature-Max:

    100 °C

  • Operating Temperature-Min:

    -40 °C

  • Optoelectronic Device Type:

    TRANSISTOR OUTPUT OPTOCOUPLER

  • Packing Method:

    TR

  • Power Dissipation-Max:

    0.26 W

  • Response Time-Max:

    0.000005 s

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

H11D1SR2M Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, thermal vias can be used to further improve heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (-40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's current handling capability at high temperatures.
  • A gate drive voltage of 10-15V is recommended for optimal switching performance. However, the device can operate with a gate drive voltage as low as 6V, but with reduced switching performance.
  • Use a TVS (Transient Voltage Suppressor) diode or a zener diode to clamp voltage transients. Ensure that the device is operated within the recommended voltage and current ratings. Also, consider using a fuse or a current limiter to prevent overcurrent conditions.
  • A dead time of 100-200ns is recommended to prevent shoot-through current and ensure reliable operation. However, the optimal dead time may vary depending on the specific application and switching frequency.

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H11D1SR2M Overview

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