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H11G2M - onsemi

Description: 80 V Minimum for H11G2M; DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage; UL1577, 4,170 VACRMS for 1 Minute; 100 V Minimum for H11G1M; Safety and Regulatory Approvals:; High Sensitivity to Low Input Current (Minimum 500% CTR at IF= 1 mA); High BVCEO:; Low Leakage Current at Elevated Temperature (Maximum 100 μA at 80°C)

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H11G2M - onsemi - PCB symbol
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H11G2M - onsemi PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - H11G2M
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H11G2M - onsemi - 3D model - Dual-In-Line Packages - H11G2M
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H11G2M Details

  • Manufacturer Part Number:

    H11G2M

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PDIP-6

  • Manufacturer Package Code:

    646BX

  • Country Of Origin:

    Thailand

  • HTS Code:

    8541.40.80.00

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    UL RECOGNIZED

  • Coll-Emtr Bkdn Voltage-Min:

    80 V

  • Configuration:

    SINGLE

  • Current Transfer Ratio-Min:

    500%

  • Dark Current-Max:

    100 nA

  • Forward Current-Max:

    0.06 A

  • Forward Voltage-Max:

    1.5 V

  • Isolation Voltage-Max:

    4170 V

  • JESD-609 Code:

    e3

  • Mounting Feature:

    THROUGH HOLE MOUNT

  • Number of Elements:

    1

  • Operating Temperature-Max:

    100 °C

  • Operating Temperature-Min:

    -40 °C

  • Optoelectronic Device Type:

    DARLINGTON OUTPUT OPTOCOUPLER

  • Packing Method:

    TUBE

  • Power Dissipation-Max:

    0.26 W

  • Response Time-Max:

    0.000005 s

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

H11G2M Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, thermal vias can be used to further improve heat dissipation.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Also, consider using a heat sink or thermal interface material to reduce thermal resistance.
  • A gate drive voltage of 10-15V is recommended for optimal switching performance. However, the device can operate with gate drive voltages as low as 6V, but with reduced switching performance.
  • Use a TVS (Transient Voltage Suppressor) diode or a zener diode to clamp voltage transients. Additionally, ensure that the device is operated within the recommended voltage and current ratings.
  • A dead time of 100-200ns is recommended to ensure that the device is fully turned off before the complementary device is turned on.

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H11G2M Overview

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