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H5DU2562GTR-E3C - Hynix

Description: 256Mb DDR SDRAM, TSSOP-66

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H5DU2562GTR-E3C - Hynix PCB footprint - Small Outline Packages - Small Outline Packages - TSSOP-66
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H5DU2562GTR-E3C - Hynix  - 3D model - Small Outline Packages - TSSOP-66
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H5DU2562GTR-E3C Details

  • Manufacturer Part Number:

    H5DU2562GTR-E3C

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TSOP2

  • Package Description:

    0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66

  • Pin Count:

    66

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.24

  • Manufacturer:

    SK Hynix Inc

  • YTEOL:

    0

  • Access Mode:

    FOUR BANK PAGE BURST

  • Access Time-Max:

    0.7 ns

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    200 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    2,4,8

  • JESD-30 Code:

    R-PDSO-G66

  • JESD-609 Code:

    e6

  • Length:

    22.225 mm

  • Memory Density:

    268435456 bit

  • Memory IC Type:

    DDR1 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    66

  • Number of Words:

    16777216 words

  • Number of Words Code:

    16000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    70 °C

  • Organization:

    16MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Equivalence Code:

    TSSOP66,.46

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.194 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    2,4,8

  • Standby Current-Max:

    0.004 A

  • Supply Current-Max:

    0.21 mA

  • Supply Voltage-Max (Vsup):

    2.7 V

  • Supply Voltage-Min (Vsup):

    2.3 V

  • Supply Voltage-Nom (Vsup):

    2.5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    TIN BISMUTH

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Width:

    10.155 mm

H5DU2562GTR-E3C Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the H5DU2562GTR-E3C is 0°C to 85°C.
  • To ensure signal integrity, it is recommended to use a signal integrity analysis tool to simulate the signal transmission and optimize the PCB design. Additionally, following the JEDEC standard for DDR4 SDRAM signal routing and termination is recommended.
  • The H5DU2562GTR-E3C is designed to operate at 1.2V, but it can tolerate a voltage range of 1.14V to 1.26V. However, operating the module outside of its recommended voltage range may affect its performance and reliability.
  • The H5DU2562GTR-E3C requires refresh commands to maintain data integrity. The refresh rate is 4,096 refreshes per second, and the refresh interval is 7.8 microseconds. The controller should issue refresh commands according to the JEDEC standard for DDR4 SDRAM.
  • The maximum current consumption of the H5DU2562GTR-E3C is 1.35A during write operations and 1.25A during read operations.

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H5DU2562GTR-E3C Overview

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