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H5TQ4G63MFR-H9C - Hynix

Description: HYNIX SEMICONDUCTOR - H5TQ4G63MFR-H9C - SDRAM, DDR3, 4GB (X16), 96FBGA

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H5TQ4G63MFR-H9C - Hynix PCB footprint - BGA - BGA - 96 Ball Fine Pitch Ball Grid Array Outline 2018-1
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H5TQ4G63MFR-H9C - Hynix  - 3D model - BGA - 96 Ball Fine Pitch Ball Grid Array Outline 2018-1
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H5TQ4G63MFR-H9C Details

  • Manufacturer Part Number:

    H5TQ4G63MFR-H9C

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    BGA

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, FBGA-96

  • Pin Count:

    96

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.36

  • Manufacturer:

    SK Hynix Inc

  • YTEOL:

    0

  • Access Mode:

    MULTI BANK PAGE BURST

  • Access Time-Max:

    0.255 ns

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    667 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    4,8

  • JESD-30 Code:

    R-PBGA-B96

  • JESD-609 Code:

    e1

  • Length:

    13 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    DDR3 DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    96

  • Number of Words:

    268435456 words

  • Number of Words Code:

    256000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Organization:

    256MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA96,9X16,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Refresh Cycles:

    8192

  • Seated Height-Max:

    1.2 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    4,8

  • Standby Current-Max:

    0.02 A

  • Supply Current-Max:

    0.285 mA

  • Supply Voltage-Max (Vsup):

    1.575 V

  • Supply Voltage-Min (Vsup):

    1.425 V

  • Supply Voltage-Nom (Vsup):

    1.5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    OTHER

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Width:

    9.4 mm

H5TQ4G63MFR-H9C Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for this module is 0°C to 85°C, with a storage temperature range of -40°C to 100°C.
  • To ensure signal integrity, it is recommended to use a signal integrity analysis tool to simulate the signal transmission and optimize the PCB design. Additionally, using a clock signal with a high slew rate and a low jitter can help improve signal integrity.
  • The recommended voltage for this module is 1.2V, with a tolerance of ±0.06V.
  • The H5TQ4G63MFR-H9C module requires a refresh command every 64ms, with a refresh cycle of 8192 cycles. The refresh command should be sent during the self-refresh mode.
  • The maximum current consumption for this module is 1.4A, with a typical current consumption of 1.2A.

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H5TQ4G63MFR-H9C Overview

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Part Image H5TQ4G63MFR-H9I SK Hynix Inc

DDR3 DRAM, 256MX16, 0.255ns, CMOS, PBGA96