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HAF1010RJ-EL-E - Renesas Electronics

Description: This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

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HAF1010RJ-EL-E - Renesas Electronics - PCB symbol
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HAF1010RJ-EL-E - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - PRSP0008DD-A
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HAF1010RJ-EL-E - Renesas Electronics - 3D model - Small Outline Packages - PRSP0008DD-A
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HAF1010RJ-EL-E Details

  • Manufacturer Part Number:

    HAF1010RJ-EL-E

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOP

  • Package Description:

    SOP-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    PRSP0008DD

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.34 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HAF1010RJ-EL-E Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal gradients and hotspots.
  • Critical timing parameters include clock frequency, setup and hold times, and propagation delay. Ensure that these parameters are met by following the recommended clocking scheme, signal routing, and termination guidelines.
  • Follow the recommended power-up and power-down sequences, and ensure that voltage ramps are within the specified limits to prevent damage to the device.
  • Follow standard ESD handling procedures, including the use of ESD-protective packaging, wrist straps, and mats. Ensure that the device is handled in a static-free environment.

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HAF1010RJ-EL-E Overview

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