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HGTD1N120BNS - onsemi

Description: 5.3A, 1200V, NPT Series N-Channel IGBT

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HGTD1N120BNS - onsemi PCB footprint - Other - Other - HGTD1N120BNS-2
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HGTD1N120BNS Details

  • Manufacturer Part Number:

    HGTD1N120BNS

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.82

  • Additional Feature:

    AVALANCHE RATED

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5.3 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    370 ns

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Rise Time-Max (tr):

    15 ns

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    458 ns

  • Turn-off Time-Nom (toff):

    333 ns

  • Turn-on Time-Max (ton):

    32 ns

  • Turn-on Time-Nom (ton):

    24 ns

  • VCEsat-Max:

    2.9 V

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HGTD1N120BNS Overview

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