HGTD1 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	HGTD1N120BNS9A onsemi	1	Low saturation voltage: VCE(sat) = 2.5V @ IC = 1.0A; Typical Fall Time...................258ns at TJ = 150°C; Low Conduction Loss; Short Circuit Rating; 2.7A, 1200V at TC = 110°C	Other	HGTD1N120BNS9A	3D model available Symbol and footprint available 3	1 Download Model
	HGTD1N120BNS onsemi	1	5.3A, 1200V, NPT Series N-Channel IGBT	Other	HGTD1N120BNS	3D model not available Symbol and footprint available 2	1 Download Model
	HGTD10N50F1S Harris Semiconductor	1	Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA		HGTD10N50F1S	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD1N120CNS Fairchild Semiconductor Corporation	1	Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-252AA		HGTD1N120CNS	3D model not available Symbol and footprint not available 0	0 Build or Request

	HGTD14N41G4VLS Intersil Corporation	1	Insulated Gate Bipolar Transistor, 24A I(C), 430V V(BR)CES, N-Channel, TO-252AA		HGTD14N41G4VLS	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N40F1S9A Harris Semiconductor	1	Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA		HGTD10N40F1S9A	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N50F1S Intersil Corporation	1	Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel		HGTD10N50F1S	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N40F1 Intersil Corporation	1	Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel		HGTD10N40F1	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD1N120CNS9A Harris Semiconductor	1	Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-252AA		HGTD1N120CNS9A	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N40F1 Rochester Electronics LLC	1	12A, 400V, N-CHANNEL IGBT, TO-251AA		HGTD10N40F1	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD1N120BNS9A Fairchild Semiconductor Corporation	1	Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA		HGTD1N120BNS9A	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD1N120CNS9A Fairchild Semiconductor Corporation	1	Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-252AA		HGTD1N120CNS9A	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD1N120BNS Fairchild Semiconductor Corporation	1	Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA		HGTD1N120BNS	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD1N120BNS9A Harris Semiconductor	1	Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA		HGTD1N120BNS9A	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD1N120BNS Intersil Corporation	1	Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA		HGTD1N120BNS	3D model not available Symbol and footprint not available 0	0 Build or Request

	HGTD1N120BNS Harris Semiconductor	1	Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA		HGTD1N120BNS	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N50F1 Intersil Corporation	1	Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel		HGTD10N50F1	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N40F1 Harris Semiconductor	1	Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA		HGTD10N40F1	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD14N41G4VLS9A Fairchild Semiconductor Corporation	1	Insulated Gate Bipolar Transistor, 24A I(C), 430V V(BR)CES, N-Channel, TO-252AA		HGTD14N41G4VLS9A	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N40F1S Harris Semiconductor	1	Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA		HGTD10N40F1S	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N50F1S Rochester Electronics LLC	1	12A, 500V, N-CHANNEL IGBT, TO-252AA		HGTD10N50F1S	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N40F1S9A Intersil Corporation	1	12A, 400V, N-CHANNEL IGBT, TO-252AA		HGTD10N40F1S9A	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N50F1S9A Harris Semiconductor	1	Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA		HGTD10N50F1S9A	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD1N120CNS Harris Semiconductor	1	Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-252AA		HGTD1N120CNS	3D model not available Symbol and footprint not available 0	0 Build or Request
	HGTD10N50F1S9A Intersil Corporation	1	12A, 500V, N-CHANNEL IGBT, TO-252AA		HGTD10N50F1S9A	3D model not available Symbol and footprint not available 0	0 Build or Request
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