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HGTG11N120CND - onsemi

Description: 43A, 1200V, NPT SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE

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HGTG11N120CND - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE  A
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HGTG11N120CND - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE  A
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HGTG11N120CND Details

  • Manufacturer Part Number:

    HGTG11N120CND

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    43 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    570 ns

  • Turn-on Time-Nom (ton):

    33 ns

HGTG11N120CND Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the HGTG11N120CND is 150°C.
  • Yes, the HGTG11N120CND is suitable for high-reliability applications, such as aerospace and defense, due to its robust design and manufacturing process.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
  • The recommended gate drive voltage for the HGTG11N120CND is between 10V and 15V, with a maximum gate-source voltage of 20V.
  • Yes, the HGTG11N120CND can be used in a parallel configuration to increase the current handling capability. However, it is essential to ensure that the devices are properly matched and the gate drive signals are synchronized.

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HGTG11N120CND Overview

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Part Image HGTG11N120CND Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247

Part Image HGTG11N120CND_NL Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247