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HGTG18N120BND - onsemi

Description: Obsolete - IGBT, 600V, SMPS

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PCB Footprints
HGTG18N120BND - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD/
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3D Models
HGTG18N120BND - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD/
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HGTG18N120BND Details

  • Manufacturer Part Number:

    HGTG18N120BND

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Collector Current-Max (IC):

    54 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    200 ns

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    390 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    22 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    345 ns

  • Turn-on Time-Nom (ton):

    38 ns

HGTG18N120BND Frequently Asked Questions (FAQs)

  • The maximum allowed case temperature for the HGTG18N120BND is 125°C, as specified in the datasheet.
  • Proper cooling can be ensured by providing a sufficient heat sink, ensuring good thermal contact between the module and heat sink, and maintaining good airflow around the heat sink.
  • The recommended gate resistor value is typically between 10 ohms and 20 ohms, depending on the specific application and switching frequency.
  • Yes, the HGTG18N120BND can be used in a parallel configuration, but it requires careful consideration of the current sharing and thermal management between the parallel devices.
  • The maximum allowed voltage transient for the HGTG18N120BND is 1200 V, as specified in the datasheet.

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HGTG18N120BND Overview

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Part Image HGTG18N120BND Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247

Part Image HGTG18N120BND Intersil Corporation

Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, TO-247

Part Image HGTG18N120BND_NL Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247