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HGTG20N60B3D - onsemi

Description: Low Conduction Loss; 40A, 600V at TC = 25°C ; Typical Fall Time: 140ns at 150°C ; Short Circuit Rated ; Hyperfast Anti-Parallel Diode

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HGTG20N60B3D - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A*
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3D Models
HGTG20N60B3D - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A*
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HGTG20N60B3D Details

  • Manufacturer Part Number:

    HGTG20N60B3D

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    41 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    360 ns

  • Turn-on Time-Nom (ton):

    45 ns

HGTG20N60B3D Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the HGTG20N60B3D is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) with a high thermal conductivity, and ensure the heat sink is properly mounted and secured.
  • The recommended gate drive voltage for the HGTG20N60B3D is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the HGTG20N60B3D is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management when operating at high frequencies.
  • To protect the HGTG20N60B3D from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in the circuit. Additionally, consider using a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) to protect against voltage spikes and surges.

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HGTG20N60B3D Overview

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Part Image HGTG20N60B3D Fairchild Semiconductor Corporation

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247