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HGTG5N120BND - onsemi

Description: Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 5A; Low Conduction Loss; Short Circuit Rating; 10A, 1200V, TC = 110°C; Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150°C

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HGTG5N120BND - onsemi - PCB symbol
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PCB Footprints
HGTG5N120BND - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD_2023
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3D Models
HGTG5N120BND - onsemi - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD_2023
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HGTG5N120BND Details

  • Manufacturer Part Number:

    HGTG5N120BND

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    21 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    357 ns

  • Turn-on Time-Nom (ton):

    35 ns

HGTG5N120BND Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the HGTG5N120BND is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide adequate heat sinking and cooling for the HGTG5N120BND. This can be achieved by using a heat sink with a thermal resistance of 1.5°C/W or lower, and ensuring good thermal contact between the device and the heat sink. Additionally, maintaining good airflow around the device and heat sink can help to dissipate heat more efficiently.
  • The recommended gate resistance for the HGTG5N120BND is between 10 ohms and 100 ohms. A gate resistance within this range helps to minimize oscillations and ensures stable operation of the device.
  • Yes, the HGTG5N120BND can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive circuits are designed to minimize any differences in switching times between the devices.
  • The recommended dead time for the HGTG5N120BND is typically in the range of 1-2 microseconds. This dead time helps to prevent cross-conduction and ensures reliable operation of the device.

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HGTG5N120BND Overview

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