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HGTP12N60C3D - onsemi

Description: Last Shipments - 600V, SMPS IGBT

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HGTP12N60C3D - onsemi - PCB symbol
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PCB Footprints
HGTP12N60C3D - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_2022
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3D Models
HGTP12N60C3D - onsemi - 3D model - Transistor Outline, Vertical - TO-220AB_2022
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HGTP12N60C3D Details

  • Manufacturer Part Number:

    HGTP12N60C3D

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    RC-IGBT

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    24 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    275 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    675 ns

  • Turn-off Time-Nom (toff):

    480 ns

  • Turn-on Time-Nom (ton):

    48 ns

  • VCEsat-Max:

    2.2 V

HGTP12N60C3D Frequently Asked Questions (FAQs)

  • The maximum SOA for the HGTP12N60C3D is typically defined by the device's voltage and current ratings. However, it's recommended to consult the application note or contact onsemi's support team for specific guidance on SOA limitations.
  • Proper thermal management involves ensuring good heat transfer between the device and the heat sink. Use a thermal interface material, ensure good contact between the device and heat sink, and consider using a heat sink with a high thermal conductivity.
  • The recommended gate drive voltage for the HGTP12N60C3D is typically between 10V to 15V, but it's recommended to consult the datasheet or application note for specific guidance on gate drive voltage requirements.
  • Yes, the HGTP12N60C3D is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is optimized for high-frequency operation.
  • Implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits can help protect the HGTP12N60C3D from damage. Consider using a voltage supervisor or a dedicated OVP/OCP IC to monitor and respond to fault conditions.

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HGTP12N60C3D Overview

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