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HN1B01FDW1T1G - onsemi

Description: High Voltage and High Current: VCEO = 50 V, IC = 200 mA; High hFE: hFE = 200-400; Moisture Sensitivity Level: 1; ESD Rating - Human Body Model: 3A - Machine Model: C; Pb-Free Package is Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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PCB Footprints
HN1B01FDW1T1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-74
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3D Models
HN1B01FDW1T1G - onsemi  - 3D model - SOT23 (6-Pin) - SC-74
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HN1B01FDW1T1G Details

  • Manufacturer Part Number:

    HN1B01FDW1T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-74 (SC-59ML) 6 LEAD

  • Package Description:

    LEAD FREE, CASE 318F-05, SC-74, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    318F-05

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.2 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN AND PNP

  • Power Dissipation-Max (Abs):

    0.38 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

HN1B01FDW1T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The HN1B01FDW1T1G has built-in ESD protection diodes. However, it's still recommended to follow proper ESD handling procedures during assembly and use. For latch-up prevention, ensure that the device is not exposed to excessive voltage or current, and use a latch-up immune design.
  • Yes, the HN1B01FDW1T1G is AEC-Q101 qualified and suitable for high-reliability and automotive applications. However, ensure that you follow the recommended operating conditions, and consult with onsemi's application engineers for specific requirements.
  • Consult the onsemi application note for troubleshooting guidelines. Also, use oscilloscopes and logic analyzers to monitor the device's inputs and outputs, and verify that the device is operated within its recommended specifications.

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HN1B01FDW1T1G Overview

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Part Image HN1B01FDW1T1G Rochester Electronics LLC

200mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, CASE 318F-05, SC-74, 6 PIN