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HN1B04FU-GR,LF - Toshiba

Description: Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp

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Symbol
HN1B04FU-GR,LF - Toshiba - PCB symbol
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PCB Footprints
HN1B04FU-GR,LF - Toshiba PCB footprint - Other - Other - HN1B04FU-GR,LF-3
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3D Models
HN1B04FU-GR,LF - Toshiba - 3D model - Other - HN1B04FU-GR,LF-3
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HN1B04FU-GR,LF Details

  • Manufacturer Part Number:

    HN1B04FU-GR,LF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

HN1B04FU-GR,LF Frequently Asked Questions (FAQs)

  • The recommended storage temperature range for HN1B04FU-GR,LF is -40°C to 125°C.
  • Yes, HN1B04FU-GR,LF is lead-free and compliant with the European Union's Restriction of Hazardous Substances (RoHS) directive.
  • The maximum operating frequency for HN1B04FU-GR,LF is 100 MHz.
  • Yes, HN1B04FU-GR,LF is AEC-Q101 qualified, making it suitable for use in automotive applications.
  • The moisture sensitivity level (MSL) of HN1B04FU-GR,LF is MSL 3, which means it can withstand up to 168 hours of exposure to 30°C/60% RH conditions.

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HN1B04FU-GR,LF Overview

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