Part Image

HN4C51J(TE85L,F) - Toshiba

Description: Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A

Download HN4C51J(TE85L,F) Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
HN4C51J(TE85L,F) - Toshiba PCB footprint - SOT23 (5-Pin) - SOT23 (5-Pin) - smv
click to zoom
3D Models
HN4C51J(TE85L,F) - Toshiba  - 3D model - SOT23 (5-Pin) - smv
click to zoom

HN4C51J(TE85L,F) Details

  • Manufacturer Part Number:

    HN4C51J(TE85L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    COMMON BASE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-G5

  • Number of Elements:

    2

  • Number of Terminals:

    5

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    0.3 W

  • Power Dissipation-Max (Abs):

    0.3 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.3 V

HN4C51J(TE85L,F) Frequently Asked Questions (FAQs)

  • The recommended storage temperature range is -40°C to 125°C.
  • While the device can operate in humid environments, it's recommended to follow proper humidity control measures to prevent moisture-related issues.
  • The maximum allowable voltage is 1.5 times the rated voltage (VCC) for a short duration (less than 1 second).
  • Follow standard ESD protection procedures, such as using wrist straps, anti-static bags, and ESD-safe workbenches, to prevent damage to the device.
  • Follow the recommended soldering temperature profile: 240°C (max) for 3 seconds (max) to prevent damage to the device.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

HN4C51J(TE85L,F) Overview

Use the download button to access the HN4C51J(TE85L,F) schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like HN4C5, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to HN4C51J(TE85L,F)

Showing 0 results