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HN4C51J - Toshiba

Description: NPN + NPN Bipolar Transistor, 120 V, 0.1 A, SOT-25(SMV)

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PCB Footprints
HN4C51J - Toshiba PCB footprint - Other - Other - SSOP5-P-0.95
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3D Models
HN4C51J - Toshiba  - 3D model - Other - SSOP5-P-0.95
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HN4C51J Details

  • Manufacturer Part Number:

    HN4C51J

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    2-3L1A, SMV, 5 PIN

  • Pin Count:

    5

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    COMMON BASE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-G5

  • Number of Elements:

    2

  • Number of Terminals:

    5

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    0.3 W

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.3 V

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HN4C51J Overview

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