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HUF75321P3 - onsemi

Description: Related Literature  - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”; 35A, 55V; Peak Current vs Pulse Width Curve; UIS Rating Curve

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HUF75321P3 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_2024
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HUF75321P3 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220AB_2024
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HUF75321P3 Details

  • Manufacturer Part Number:

    HUF75321P3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    93 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75321P3 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal path short and use a thermal pad on the bottom of the package.
  • Use a heat sink with a thermal interface material, ensure good airflow, and consider derating the device's power handling at high temperatures (above 125°C).
  • Monitor the device's temperature, current, and voltage. Implement over-temperature protection (OTP), over-current protection (OCP), and under-voltage lockout (UVLO) to prevent damage.
  • Use a gate driver with a high current capability, ensure a low inductance layout, and consider using a gate resistor to slow down the switching edge and reduce EMI.
  • Use a shielded cable or a twisted pair for the gate drive signal, add a common-mode choke or ferrite bead to the power lines, and consider using a snubber circuit to reduce ringing.

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HUF75321P3 Overview

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HUF75321P3 Alternates

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Image Part Number Model
Part Image HUF75321P3 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image MTP50N05E Motorola Semiconductor Products

Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image MTP50N05E Texas Instruments

50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

Part Image HUF75321P3 Harris Semiconductor

Power Field-Effect Transistor, 31A I(D), 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image MTP50N06V onsemi

Power Field-Effect Transistor, 42A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for HUF75321P3, check out Findchips.com