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HUF75339P3 - onsemi

Description: 75A, 55V; Peak Current vs Pulse Width Curve; Temperature Compensated PSPICE® and SABER™ Models; Related Literature   - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"; SPICE and SABER Thermal Impedance Models; UIS Rating Curve

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PCB Footprints
HUF75339P3 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A(ON Semi)
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3D Models
HUF75339P3 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A(ON Semi)
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HUF75339P3 Details

  • Manufacturer Part Number:

    HUF75339P3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75339P3 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to dissipate heat efficiently.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.
  • Monitor the device's temperature, voltage, and current. Implement over-temperature protection (OTP), over-voltage protection (OVP), and over-current protection (OCP) to prevent damage from excessive stress.
  • Use a gate drive circuit with a low impedance path to the gate, a high-current gate driver, and a suitable gate resistor value (e.g., 10-20 ohms) to minimize switching losses and ensure reliable operation.
  • Implement ESD protection measures such as using ESD-sensitive handling procedures, ESD-protected workstations, and incorporating ESD protection devices (e.g., TVS diodes) in the circuit design.

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HUF75339P3 Overview

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