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HUF75345P3 - onsemi

Description: Thermal Impedance SPICE and SABER Models; Related Literature  - TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”; 75A, 55V; Temperature Compensated PSPICE® and SABER™ Models; Peak Current vs Pulse Width Curve; UIS Rating Curve

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PCB Footprints
HUF75345P3 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD
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3D Models
HUF75345P3 - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD
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HUF75345P3 Details

  • Manufacturer Part Number:

    HUF75345P3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.1

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    325 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75345P3 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Monitor the device's current, voltage, and temperature. Implement overcurrent protection (OCP), overvoltage protection (OVP), and overtemperature protection (OTP) to prevent damage and ensure safe operation.
  • Use a gate driver with a high current capability and a low output impedance. Ensure the gate drive circuit is properly decoupled and the layout is optimized for low inductance and high-frequency noise reduction.
  • Implement ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Ensure the PCB layout is designed to minimize ESD susceptibility and follow proper handling and storage procedures.

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HUF75345P3 Overview

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