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HUF75542P3 - onsemi

Description: Ultra Low On-Resistance - rDS(ON)= 0.014Ω, VGS = 10V; Simulation Models  - Temperature Compensated PSPICE® and SABER™ Electrical Models   - Spice and SABER Thermal Impedance Models; Peak Current vs Pulse Width Curve; UIS Rating Curve

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PCB Footprints
HUF75542P3 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD_2023
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3D Models
HUF75542P3 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD_2023
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HUF75542P3 Details

  • Manufacturer Part Number:

    HUF75542P3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75542P3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the HUF75542P3 is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and ensure the device is operated within the specified voltage and current ranges.
  • For optimal thermal performance, use a multi-layer PCB with thermal vias, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet and application notes.
  • Handle the device with ESD-protective equipment, and ensure the PCB is designed with ESD protection in mind, such as using ESD-protection diodes and resistors.
  • Follow the recommended soldering and rework conditions outlined in the datasheet, and ensure the device is not exposed to excessive temperatures or thermal shocks during the soldering process.

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HUF75542P3 Overview

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Part Image HUF75542P3 Rochester Electronics LLC

75A, 80V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Image HUF75542P3 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 80V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB