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HUF75545S3ST - onsemi

Description: Temperature Compensated PSPICE® and SABERTM Electrical Models; UIS Rating Curve; Peak Current vs Pulse Width Curve; Spice and SABER Thermal Impedance Models; Ultra Low On-Resistance  rDS(ON) = 0.010 Ω, VGS = 10 V

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PCB Footprints
HUF75545S3ST - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F_2023
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HUF75545S3ST Details

  • Manufacturer Part Number:

    HUF75545S3ST

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    TO-263AB, 3 PIN

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    270 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75545S3ST Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the HUF75545S3ST is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and ensure the device is operated within the specified voltage and current ranges.
  • For optimal thermal performance, use a multi-layer PCB with thermal vias, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet and application notes.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to protect the device from electrostatic discharge. Follow the recommended ESD protection guidelines in the datasheet and application notes.
  • Follow the recommended testing and validation procedures outlined in the datasheet and application notes, including DC and AC characterization, and ensure the device meets the specified electrical characteristics.

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HUF75545S3ST Overview

Use the download button to access the HUF75545S3ST schematic symbol and PCB footprint.
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Part Image HUF75545S3ST_NL Rochester Electronics LLC

75A, 80V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN

Part Image HUF75545S3ST Rochester Electronics LLC

75A, 80V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN

Part Image HUF75545S3ST Intersil Corporation

Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image HUF75545S3ST Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image HUF75545S3ST_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for HUF75545S3ST, check out Findchips.com