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HUF75645P3 - onsemi

Description: Peak Current vs Pulse Width Curve; UIS Rating Curve; Spice and SABER Thermal Impedance Models; Temperature Compensated PSPICE® and SABER™ Electrical Models; Ultra Low On-Resistance   rDS(ON) = 0.014Ω, VGS = 10V

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HUF75645P3 Details

  • Manufacturer Part Number:

    HUF75645P3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75645P3 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • Monitor the device's junction temperature, voltage, and current. Implement over-temperature, over-voltage, and over-current protection to prevent damage and ensure reliable operation.
  • Yes, but ensure the device is properly sealed and conformal coated to prevent moisture ingress. Follow the manufacturer's guidelines for moisture sensitivity and handling.
  • Use a shielded enclosure, keep the device away from antennas and high-frequency components, and implement EMI filters and shielding on the PCB. Follow the manufacturer's EMI guidelines and best practices.

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HUF75645P3 Overview

Use the download button to access the HUF75645P3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image HUF75645P3 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image HUF75645P3 Intersil Corporation

Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image HUF75645P3T Intersil Corporation

Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET