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HUF75645S3ST - onsemi

Description: Spice and SABER Thermal Impedance Models; Ultra Low On-Resistance  rDS(ON) = 0.014Ω, VGS = 10V; UIS Rating Curve; Peak Current vs Pulse Width Curve; Temperature Compensated PSPICE® and SABER™ Electrical Models

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HUF75645S3ST - onsemi PCB footprint - Other - Other - HUF75645S3ST-3
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HUF75645S3ST Details

  • Manufacturer Part Number:

    HUF75645S3ST

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75645S3ST Frequently Asked Questions (FAQs)

  • The maximum SOA is not explicitly stated in the datasheet, but it can be estimated using the MOSFET's thermal resistance, voltage, and current ratings. A safe operating area analysis should be performed to ensure the device operates within its thermal limits.
  • Use a gate driver or a voltage regulator to ensure the gate-source voltage (Vgs) is within the recommended range of 2-10V. This will prevent damage to the MOSFET and ensure proper operation.
  • A good PCB layout should minimize thermal resistance and ensure good heat dissipation. Use a thermal pad or heat sink, and consider using a thermal interface material (TIM) to improve heat transfer. Follow onsemi's recommended PCB layout guidelines for optimal performance.
  • Use proper insulation, creepage, and clearance distances to ensure the device operates safely. Ensure your design meets the required safety standards, such as IEC 60664-1, and follow onsemi's guidelines for high-voltage design considerations.
  • The HUF75645S3ST has a typical lifespan of 10-15 years, depending on operating conditions. Follow onsemi's reliability guidelines and perform regular maintenance to ensure the device operates within its specifications.

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HUF75645S3ST Overview

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HUF75645S3ST Alternates

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Part Image HUF75645S3S Rochester Electronics LLC

75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Part Image HUF75645S3ST Rochester Electronics LLC

75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Part Image HUF75645S3ST_NL Rochester Electronics LLC

75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Part Image HUF75645S3S Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image HUF75645S3S_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for HUF75645S3ST, check out Findchips.com