Please enter a minimum 3 letters or numbers
Technical Content
Part Image

HUF75652G3 - onsemi

Description: Temperature Compensated PSPICE® and SABER™ Electrical Models; Peak Current vs Pulse Width Curve; Ultra Low On-Resistance  rDS(ON) = 0.008Ω, VGS = 10V; UIS Rating Curve; Spice and SABER Thermal Impedance Models

Download HUF75652G3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
HUF75652G3 - onsemi - PCB symbol
click to zoom
PCB Footprints
HUF75652G3 - onsemi PCB footprint - Other - Other - HUF75652G3-1
click to zoom
3D Models
HUF75652G3 - onsemi - 3D model - Other - HUF75652G3-1
click to zoom

HUF75652G3 Details

  • Manufacturer Part Number:

    HUF75652G3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    515 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75652G3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the HUF75652G3 is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and consider using a voltage regulator or bias circuit to maintain stable voltage and current levels.
  • For optimal thermal performance, use a multi-layer PCB with thermal vias, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet and application notes.
  • Handle the device with ESD-protective equipment, and follow proper ESD handling procedures. Use ESD-protective packaging and storage materials, and consider using ESD-protection devices or circuits in the design.
  • Use a gate drive circuit with a high current capability and fast rise/fall times to ensure proper switching. Consider using a dedicated gate driver IC or a discrete gate drive circuit with a high-voltage capacitor and a low-impedance path.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

HUF75652G3 Overview

Use the download button to access the HUF75652G3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like HUF75, or try a keyword search, such as Power Field-Effect Transistors

Parts related to HUF75652G3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

HUF75652G3 Alternates

Showing results

Image Part Number Model
Part Image HUF75652G3_NL Rochester Electronics LLC

75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Part Image HUF75652G3 Rochester Electronics LLC

75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Part Image HUF75652G3 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image HUF75652G3 Intersil Corporation

Power Field-Effect Transistor, 75A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image HUF75652G3_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
For a full list of alternate parts for HUF75652G3, check out Findchips.com