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HUF76407D3ST - onsemi

Description: Peak Current vs Pulse Width Curve; Simulation Models  - Temperature Compensated PSPICE® and SABER™ Electrical Models  - Spice and SABER Thermal Impedance Models; Switching Time vs RGS Curves; Ultra Low On-Resistance  - rDS(ON) = 0.092Ω, VGS = 10V  - rDS(ON) = 0.107Ω, VGS = 5V; UIS Rating Curve

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HUF76407D3ST - onsemi PCB footprint - Other - Other - HUF76407D3ST-1
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HUF76407D3ST Details

  • Manufacturer Part Number:

    HUF76407D3ST

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.117 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF76407D3ST Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal path short and use a thermal pad on the bottom of the package.
  • Ensure good thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Monitor the junction temperature (Tj) and adjust the design accordingly.
  • The maximum allowed voltage on the input pins is 5.5V, but it's recommended to keep it below 5V to ensure reliable operation and prevent damage.
  • Yes, the HUF76407D3ST is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure you follow the recommended operating conditions and design guidelines.
  • Use ESD protection devices or circuits on the input lines, and follow proper handling and storage procedures to prevent ESD damage.

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HUF76407D3ST Overview

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Part Image HUF76407D3S Rochester Electronics LLC

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Part Image HUF76407D3ST Intersil Corporation

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Part Image HUF76407D3ST Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 60V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image HUF76407D3S Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 60V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA