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HUF76423P3 - onsemi

Description: Peak Current vs Pulse Width Curve; Simulation Models  - Temperature Compensated PSPICE® and SABER™ Electrical Models   - SPICE and SABER Thermal Impedance Models; UIS Rating Curve ; Switching Time vs RGS Curves; Ultra Low On-Resistance  - rDS(ON) = 0.030Ω, VGS = 10V  - rDS(ON) = 0.035Ω, VGS = 5V

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PCB Footprints
HUF76423P3 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220, Molded, 3LEad, JEDEC variation AB_1
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3D Models
HUF76423P3 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220, Molded, 3LEad, JEDEC variation AB_1
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HUF76423P3 Details

  • Manufacturer Part Number:

    HUF76423P3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    85 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF76423P3 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to dissipate heat efficiently.
  • Ensure the input voltage (VIN) is within the recommended range (12V to 18V). Use a high-quality, low-ESR capacitor (e.g., 10uF, 25V, X5R) for input decoupling. Also, use a 1uF, 25V, X5R capacitor for output decoupling.
  • The maximum allowed case temperature (Tc) is 125°C. Ensure proper heat sinking and thermal management to maintain a safe operating temperature.
  • Yes, the HUF76423P3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure you follow the recommended operating conditions and design guidelines for these applications.
  • Use a voltage supervisor or a power-on reset (POR) circuit to monitor the input voltage and ensure the device is only enabled when the input voltage is within the recommended range.

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HUF76423P3 Overview

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Part Image HUF76423P3 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 35A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB