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HUF76429S3ST - onsemi

Description: Switching Time vs RGS Curves; Peak Current vs Pulse Width Curve; Ultra Low On-Resistance  - rDS(ON) = 0.022 Ω, VGS = 10  - rDS(ON) = 0.025 Ω VGS = 5 V; UIS Rating Curve ; Simulation Models  - Temperature Compensated PSPICE® and SABER™ Electrical Models   - SPICE and SABER Thermal Impedance Models

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PCB Footprints
HUF76429S3ST - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD)_2021
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HUF76429S3ST Details

  • Manufacturer Part Number:

    HUF76429S3ST

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    47 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF76429S3ST Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Exceeding the maximum junction temperature (Tj) can lead to reduced lifespan, increased thermal resistance, and potential device failure. Ensure the system design keeps the junction temperature below the recommended maximum.
  • Implement a robust EOS protection scheme, including TVS diodes, resistors, and capacitors. Ensure the system design can withstand voltage transients and surges.
  • A gate drive circuit with a low impedance, high-current capability, and a fast rise/fall time is recommended. Consider using a dedicated gate driver IC or a discrete circuit with a low-ESR capacitor and a high-current transistor.

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HUF76429S3ST Overview

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Part Image HUF76429S3S Intersil Corporation

Power Field-Effect Transistor, 47A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image HUF76429S3ST Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 47A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image HUF76429S3S Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 47A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB