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HUF76629D3ST - onsemi

Description: Typ rDS(on) = 41 mΩ at VGS = 10V, ID = 20A; Typ Qg(tot) = 39 nC at VGS = 10 V, ID = 20 A; UIS Capability; RoHS Compliant; Qualified to AEC Q101

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HUF76629D3ST - onsemi PCB footprint - Other - Other - D-PAK(TO-252)
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HUF76629D3ST Details

  • Manufacturer Part Number:

    HUF76629D3ST

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.75

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF76629D3ST Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Exceeding the maximum junction temperature (Tj) can lead to reduced lifespan, increased thermal resistance, and potentially catastrophic failure. Ensure the device operates within the recommended temperature range.
  • Implement a robust EOS protection scheme, including TVS diodes, resistors, and capacitors. Ensure the device is operated within the recommended voltage and current ranges.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Avoid exposing the device to temperatures above 30°C or humidity above 60%.

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HUF76629D3ST Overview

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Part Image HUF76629D3S Rochester Electronics LLC

20A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part Image HUF76629D3ST Rochester Electronics LLC

20A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part Image HUF76629D3S Intersil Corporation

Power Field-Effect Transistor, 20A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image HUF76629D3ST Intersil Corporation

Power Field-Effect Transistor, 20A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image HUF76629D3S Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for HUF76629D3ST, check out Findchips.com