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HY57V641620ET-7 - Hynix

Description: The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16. H

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HY57V641620ET-7 - Hynix PCB footprint - Small Outline Packages - Small Outline Packages - HY57V28820A
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HY57V641620ET-7 - Hynix  - 3D model - Small Outline Packages - HY57V28820A
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HY57V641620ET-7 Details

  • Manufacturer Part Number:

    HY57V641620ET-7

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TSOP2

  • Package Description:

    0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

  • Pin Count:

    54

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.02

  • Manufacturer:

    SK Hynix Inc

  • YTEOL:

    0

  • Access Mode:

    FOUR BANK PAGE BURST

  • Access Time-Max:

    5.4 ns

  • Additional Feature:

    AUTO/SELF REFRESH

  • Clock Frequency-Max (fCLK):

    143 MHz

  • I/O Type:

    COMMON

  • Interleaved Burst Length:

    1,2,4,8

  • JESD-30 Code:

    R-PDSO-G54

  • JESD-609 Code:

    e0

  • Length:

    22.238 mm

  • Memory Density:

    67108864 bit

  • Memory IC Type:

    SYNCHRONOUS DRAM

  • Memory Width:

    16

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    54

  • Number of Words:

    4194304 words

  • Number of Words Code:

    4000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    70 °C

  • Organization:

    4MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSOP2

  • Package Equivalence Code:

    TSOP54,.46,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE

  • Qualification Status:

    Not Qualified

  • Refresh Cycles:

    4096

  • Seated Height-Max:

    1.194 mm

  • Self Refresh:

    YES

  • Sequential Burst Length:

    1,2,4,8,FP

  • Standby Current-Max:

    0.002 A

  • Supply Current-Max:

    0.18 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    3 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    DUAL

  • Width:

    10.16 mm

HY57V641620ET-7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for HY57V641620ET-7 is 0°C to 95°C, with a storage temperature range of -40°C to 100°C.
  • The HY57V641620ET-7 requires a refresh cycle every 64ms (tREFI) to maintain data integrity. You can use a refresh counter to keep track of the refresh cycles and issue a refresh command (REF) to the DRAM.
  • The minimum clock cycle time for HY57V641620ET-7 is 3.75ns (266.67MHz) for a clock frequency of 133.33MHz.
  • During power-up, apply a stable VDD and VDDQ voltage, then wait for a minimum of 200us before applying a clock signal. During power-down, stop the clock signal, then reduce VDD and VDDQ voltage to 0V.
  • The maximum allowable voltage for HY57V641620ET-7 is 1.95V to 2.05V for VDD and VDDQ.

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