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IAUA200N04S5N010 - Infineon

Description: OptiMOS™ 5 Power-Transistor N-channel – Enhancement mode – Normal Level

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IAUA200N04S5N010 - Infineon PCB footprint - Other - Other - PG-HSOF-5-1
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IAUA200N04S5N010 - Infineon  - 3D model - Other - PG-HSOF-5-1
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IAUA200N04S5N010 Details

  • Manufacturer Part Number:

    IAUA200N04S5N010

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Indonesia, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PSSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    800 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IAUA200N04S5N010 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and spacing to ensure optimal heat dissipation.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching.
  • The IAUA200N04S5N010 has a maximum allowed overcurrent of 2.5 times the nominal current. To protect the module, use a fast-acting fuse or a current sensing circuit with a shutdown mechanism to prevent damage from overcurrent conditions.
  • Ensure good thermal contact between the module and the heat sink, use a heat sink with a high thermal conductivity, and provide adequate airflow. Also, consider using thermal interface materials and thermal sensors to monitor the module's temperature.
  • Infineon recommends soldering the module using a reflow soldering process with a peak temperature of 260°C and a dwell time of 30-60 seconds. The soldering process should be done in a nitrogen atmosphere to prevent oxidation.

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IAUA200N04S5N010 Overview

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