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IAUTN12S5N017ATMA1 - Infineon

Description: Kanał N 120 V Montaż powierzchniowy PG-HSOF-8-1

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IAUTN12S5N017ATMA1 - Infineon PCB footprint - Other - Other - PG-HSOF-8-1_2023-2
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IAUTN12S5N017ATMA1 - Infineon  - 3D model - Other - PG-HSOF-8-1_2023-2
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IAUTN12S5N017ATMA1 Details

  • Manufacturer Part Number:

    IAUTN12S5N017ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    300 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    68 pF

  • JESD-30 Code:

    R-PSSO-F8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    358 W

  • Pulsed Drain Current-Max (IDM):

    1170 A

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IAUTN12S5N017ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IAUTN12S5N017ATMA1 is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the maximum junction temperature (Tj) should not exceed 150°C for reliable operation.
  • To ensure proper thermal management, it's crucial to provide adequate heat sinking, such as a heat sink with a thermal interface material (TIM) and a sufficient cooling system. The thermal resistance (Rth) of the heat sink should be as low as possible, and the module should be mounted correctly to minimize thermal resistance.
  • The recommended gate resistor value for the IAUTN12S5N017ATMA1 is typically in the range of 10 Ω to 20 Ω. However, the optimal value may vary depending on the specific application, switching frequency, and gate driver characteristics. It's essential to consult the datasheet and application notes for more information.
  • Yes, the IAUTN12S5N017ATMA1 can be used in a parallel configuration, but it's crucial to ensure that the modules are properly matched, and the gate drive signals are synchronized. Additionally, the thermal management system should be designed to handle the increased power dissipation.
  • The maximum allowable overcurrent for the IAUTN12S5N017ATMA1 is typically specified as 2-3 times the nominal current rating for a short duration (e.g., 10-100 μs). However, it's essential to consult the datasheet and application notes for more information on overcurrent protection and fault handling.

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