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IAUTN12S5N018TATMA1 - Infineon

Description: Trans MOSFET N-CH 120V 309A Automotive 16-Pin HDSOP EP T/R

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IAUTN12S5N018TATMA1 - Infineon PCB footprint - Other - Other - PG-HDSOP-16-1
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IAUTN12S5N018TATMA1 - Infineon  - 3D model - Other - PG-HDSOP-16-1
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IAUTN12S5N018TATMA1 Details

  • Manufacturer Part Number:

    IAUTN12S5N018TATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HDSOP-16-1, 16 PIN

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    300 A

  • Drain-source On Resistance-Max:

    0.0018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    68 pF

  • JESD-30 Code:

    R-PDSO-G16

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    16

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    358 W

  • Pulsed Drain Current-Max (IDM):

    1150 A

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IAUTN12S5N018TATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and pad design to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching.
  • The maximum allowed overcurrent is typically 2-3 times the rated current. To protect the module, use a fast-acting fuse or a current sensor with a shutdown circuit to detect overcurrent conditions and disconnect the power supply.
  • Use a heat sink with a thermal resistance of ≤ 0.5 K/W and ensure good thermal contact between the module and heat sink. Also, provide adequate airflow and consider using a fan or other cooling system for high-power applications.
  • Follow Infineon's recommended soldering and assembly procedures outlined in their application note AN2013-04, which includes guidelines for soldering temperature, time, and flux type to ensure reliable connections.

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IAUTN12S5N018TATMA1 Overview

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