IGB110S101 - Infineon

IGB110S101 Details

• Manufacturer Part Number:

  IGB110S101

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Austria, Malaysia

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  10

• Configuration:

  SINGLE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  23 A

• Drain-source On Resistance-Max:

  0.011 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  3 pF

• JESD-30 Code:

  S-PTSO-N4

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  4

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -40 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  SQUARE

• Package Style:

  SMALL OUTLINE

• Packing Method:

  TAPE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  15 W

• Pulsed Drain Current-Max (IDM):

  210 A

• Surface Mount:

  YES

• Terminal Form:

  NO LEAD

• Terminal Position:

  TRIPLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  GALLIUM NITRIDE