IGB15N65S5 - Infineon

IGB15N65S5 Details

• Manufacturer Part Number:

  IGB15N65S5

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Germany, Malaysia

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  6

• Case Connection:

  COLLECTOR

• Collector Current-Max (IC):

  35 A

• Collector-Emitter Voltage-Max:

  650 V

• Configuration:

  SINGLE

• Gate-Emitter Thr Voltage-Max:

  4.8 V

• Gate-Emitter Voltage-Max:

  20 V

• JEDEC-95 Code:

  TO-263AB

• JESD-30 Code:

  R-PSSO-G2

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -40 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  105 W

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Application:

  POWER CONTROL

• Transistor Element Material:

  SILICON

• Turn-off Time-Nom (toff):

  187 ns

• Turn-on Time-Nom (ton):

  27 ns

• VCEsat-Max:

  1.7 V