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IGB50N60TATMA1 - Infineon

Description: IGBT Transistors LOW LOSS IGBT TECH 600V 50A

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PCB Footprints
IGB50N60TATMA1 - Infineon PCB footprint - Other - Other - PG-TO263-3_Height=4.82mm
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IGB50N60TATMA1 Details

  • Manufacturer Part Number:

    IGB50N60TATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Pin Count:

    4

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    396 ns

  • Turn-on Time-Nom (ton):

    60 ns

IGB50N60TATMA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IGB50N60TATMA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IGB50N60TATMA1 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 100 ohms is suitable for most applications. However, it's recommended to consult the datasheet and application notes for more specific guidance.
  • Yes, the IGB50N60TATMA1 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is properly driven and cooled to prevent overheating and reduce electromagnetic interference (EMI).
  • To protect the IGB50N60TATMA1 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry. Additionally, consider using a gate driver with built-in overcurrent protection and undervoltage lockout (UVLO) to prevent the device from operating outside its safe operating area.

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