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IGLT65R035D2 - Infineon

Description: 650 V CoolGaN™ Gen2 enhancement-mode power transistor featuring 42 mΩ RDS(on), 11 nC gate charge, 90 A pulsed current, and ultra-fast switching, optimized for high-efficiency industrial, telecom, and datacenter SMPS and PFC topologies.

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IGLT65R035D2 - Infineon PCB footprint - Other - Other - PG‑HDSOP‑16 _2025-1.1
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IGLT65R035D2 Details

  • Manufacturer Part Number:

    IGLT65R035D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    10

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    47 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.3 pF

  • JESD-30 Code:

    R-PDSO-G16

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    16

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    154 W

  • Pulsed Drain Current-Max (IDM):

    97 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

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IGLT65R035D2 Overview

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