IGLT6 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 650 V CoolGaN™ Gen2 enhancement-mode power transistor featuring 42 mΩ RDS(on), 11 nC gate charge, 90 A pulsed current, and ultra-fast switching, optimized for high-efficiency industrial, telecom, and datacenter SMPS and PFC topologies. Other IGLT65R035D2 1 Download Model
Part Image Part Image 1 CoolGaN™ BDS 650 V G5CoolGaN™ Bidirectional switch, enhancement ‑mode ‑40 ‑ 150 °C,PG-HDSOP-16-U06 Other IGLT65R110B2 1 Download Model
Part Image Part Image 1 CoolGaN™ BDS 650 V G CoolGaN™ Bi‑directional switch enhancement‑mode , 55 mΩ , PG-HDSOP-16-9 Other IGLT65R055B2 1 Download Model
Part Image Part Image 1 N-Channel 650 V 38A (Tc) 124W (Tc) Surface Mount PG-HDSOP-16-8 Other IGLT65R045D2ATMA1 1 Download Model
Part Image Part Image 1 N-Channel 650 V 15A (Tc) 55W (Tc) Surface Mount PG-HDSOP-16-8 -55°C ~ 150°C Other IGLT65R110D2ATMA1 1 Download Model
Part Image Part Image 1 GaN FETs HV GAN DISCRETES Small Outline Packages IGLT65R055D2ATMA1 1 Download Model
Part Image Part Image 1 N-Channel 650 V 47A (Tc) 154W (Tc) Surface Mount PG-HDSOP-16-8,154W (Tc),540 pF @ 400 V,-55°C ~ 150°C (TJ) Other IGLT65R035D2ATMA1 1 Download Model
Part Image Part Image 1 N-Channel 650 V 67A (Tc) 219W (Tc) Surface Mount PG-HDSOP-16-8 Other IGLT65R025D2AUMA1 1 Download Model
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IGLT65R025D2 Infineon Technologies AG
1 Power Field-Effect Transistor, 67A I(D), 650V, 0.03ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET IGLT65R025D2 0 Build or Request
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IGLT65R055D2 Infineon Technologies AG
1 Power Field-Effect Transistor, 31A I(D), 650V, 0.066ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET IGLT65R055D2 0 Build or Request
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IGLT65R045D2 Infineon Technologies AG
1 Power Field-Effect Transistor, 38A I(D), 650V, 0.054ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET IGLT65R045D2 0 Build or Request
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IGLT65R110D2 Infineon Technologies AG
1 Power Field-Effect Transistor, 15A I(D), 650V, 0.14ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET IGLT65R110D2 0 Build or Request
Part Image Part Image 1 Infineon CoolGaN Bi -directional switch, enhancement -mode IGLT65R055B2AUMA1 1 Download Model
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