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IGP30N65F5 - Infineon

Description: IGBT Transistors IGBT PRODUCTS TrenchStop 5

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IGP30N65F5 - Infineon  - 3D model
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IGP30N65F5 Details

  • Manufacturer Part Number:

    IGP30N65F5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    55 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    206 ns

  • Turn-on Time-Nom (ton):

    28 ns

  • VCEsat-Max:

    2.1 V

IGP30N65F5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IGP30N65F5 is 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation to ensure reliable operation.
  • To ensure the IGP30N65F5 is fully turned on, the gate-source voltage (VGS) should be at least 10V, and the gate drive circuit should be able to provide a sufficient current to charge the gate capacitance quickly.
  • A good PCB layout for the IGP30N65F5 should minimize the parasitic inductance and resistance of the power loop, and ensure a low-impedance path for the drain and source connections. A 2-layer or 4-layer PCB with a solid ground plane is recommended.
  • Yes, the IGP30N65F5 is suitable for high-frequency switching applications up to 1 MHz, thanks to its low gate charge and internal gate resistance. However, the PCB layout and gate drive circuit should be optimized to minimize switching losses.
  • To protect the IGP30N65F5 from overvoltage and overcurrent, a suitable voltage clamp or transient voltage suppressor (TVS) should be used, along with an overcurrent protection circuit that can detect and respond to excessive drain currents.

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IGP30N65F5 Overview

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