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IGP50N60T - Infineon

Description: Infineon IGP50N60T, IGBT Transistor, 50 A Dual 600 V, 3+Tab-Pin PG-TO-220

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PCB Footprints
IGP50N60T - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG TO220-3
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3D Models
IGP50N60T - Infineon  - 3D model - Transistor Outline, Vertical - PG TO220-3
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IGP50N60T Details

  • Manufacturer Part Number:

    IGP50N60T

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    333 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    396 ns

  • Turn-on Time-Nom (ton):

    60 ns

IGP50N60T Frequently Asked Questions (FAQs)

  • The maximum junction temperature that IGP50N60T can withstand is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed thermal pad, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for IGP50N60T depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 Ω to 100 Ω is suitable for most applications. However, it's essential to consult the datasheet and application notes for specific guidance.
  • Yes, IGP50N60T is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, gate charge, and thermal performance when designing the application. Consult the datasheet and application notes for guidance on high-frequency operation.
  • To protect IGP50N60T from overvoltage and overcurrent, it's essential to implement proper protection circuits, such as overvoltage protection (OVP) and overcurrent protection (OCP) circuits. Additionally, consider using a gate driver with built-in protection features, such as undervoltage lockout (UVLO) and overcurrent detection.

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