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IGW25N120H3 - Infineon

Description: IGBT N-Ch 1200V 50A High-Speed TO247 Infineon IGW25N120H3 N-channel IGBT Transistor, 50 A 1200 V, 1MHz, 3-Pin TO-247

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PCB Footprints
IGW25N120H3 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247
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3D Models
IGW25N120H3 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 247
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IGW25N120H3 Details

  • Manufacturer Part Number:

    IGW25N120H3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    326 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    397 ns

  • Turn-on Time-Nom (ton):

    61 ns

IGW25N120H3 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the IGW25N120H3 is 20 kHz, but it can be used up to 50 kHz with some derating.
  • Proper thermal management can be achieved by ensuring good heat sink contact, using a thermal interface material, and maintaining a low thermal resistance between the module and heat sink.
  • The recommended gate resistor value is between 10 ohms and 20 ohms, depending on the specific application and switching frequency.
  • Yes, the IGW25N120H3 can be used in a parallel configuration, but it requires careful consideration of the current sharing and thermal management between the modules.
  • The maximum allowed voltage imbalance is ±10% of the nominal DC link voltage to ensure proper operation and prevent damage to the modules.

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