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IGW25N120H3FKSA1 - Infineon

Description: IGBT Trench Field Stop 1200V 50A 326W Through Hole PG-TO247-3

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Symbol
IGW25N120H3FKSA1 - Infineon - PCB symbol
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PCB Footprints
IGW25N120H3FKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3_2021
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3D Models
IGW25N120H3FKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO247-3_2021
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IGW25N120H3FKSA1 Details

  • Manufacturer Part Number:

    IGW25N120H3FKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    397 ns

  • Turn-on Time-Nom (ton):

    61 ns

IGW25N120H3FKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IGW25N120H3FKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate of the module, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IGW25N120H3FKSA1 is typically in the range of 10 Ω to 20 Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IGW25N120H3FKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing. Consult the datasheet and application notes for more information on parallel operation.
  • The maximum allowable voltage transient for the IGW25N120H3FKSA1 is specified as 1200 V. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the device.

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IGW25N120H3FKSA1 Overview

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