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IGW30N100T - Infineon

Description: IGBT 1000V, 60A,TO-247-3

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PCB Footprints
IGW30N100T - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247
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3D Models
IGW30N100T - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO247
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IGW30N100T Details

  • Manufacturer Part Number:

    IGW30N100T

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AD

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    1000 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    412 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    569 ns

  • Turn-on Time-Nom (ton):

    54 ns

IGW30N100T Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IGW30N100T is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • Proper cooling of the IGW30N100T is crucial to prevent overheating. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, consider using a thermal interface material (TIM) to fill any gaps between the device and heat sink.
  • The recommended gate resistor value for the IGW30N100T is between 10Ω and 100Ω. A lower gate resistor value can reduce switching losses, but may also increase the risk of oscillations. A higher gate resistor value can reduce oscillations, but may also increase switching losses.
  • Yes, the IGW30N100T can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate signals are synchronized to prevent uneven current sharing.
  • To protect the IGW30N100T from overvoltage and overcurrent, use a suitable voltage clamp or surge protector, and consider adding overcurrent protection (OCP) and overtemperature protection (OTP) circuits. Also, ensure that the device is operated within its specified voltage and current ratings.

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