Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IGW30N60H3FKSA1 - Infineon

Description: IGBT Trench Field Stop 600 V 60 A 187 W Through Hole PG-TO247-3-1 -40°C ~ 175°C

Download IGW30N60H3FKSA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IGW30N60H3FKSA1 - Infineon - PCB symbol
click to zoom
PCB Footprints
IGW30N60H3FKSA1 - Infineon PCB footprint - Other - Other - PG-TO247-3_2025-1.1
click to zoom
3D Models
IGW30N60H3FKSA1 - Infineon - 3D model - Other - PG-TO247-3_2025-1.1
click to zoom

IGW30N60H3FKSA1 Details

  • Manufacturer Part Number:

    IGW30N60H3FKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    262 ns

  • Turn-on Time-Nom (ton):

    50 ns

IGW30N60H3FKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IGW30N60H3FKSA1 is 150°C, as specified in the datasheet.
  • Proper thermal management of the IGW30N60H3FKSA1 can be ensured by providing a good heat sink, ensuring good thermal contact between the module and the heat sink, and keeping the ambient temperature within the specified range.
  • The recommended gate resistor value for the IGW30N60H3FKSA1 is typically in the range of 10 ohms to 20 ohms, depending on the specific application and switching frequency.
  • Yes, the IGW30N60H3FKSA1 can be used in a parallel configuration, but it requires careful consideration of the current sharing and thermal management between the parallel modules.
  • The maximum allowable voltage transient for the IGW30N60H3FKSA1 is specified as 120% of the maximum rated voltage, which is 600V for this module.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IGW30N60H3FKSA1 Overview

Use the download button to access the IGW30N60H3FKSA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IGW30, or try a keyword search, such as IGBTs

Parts related to IGW30N60H3FKSA1

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

IGW30N60H3FKSA1 Alternates

Showing results

Image Part Number Model
Part Image IGW30N60H3 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247