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IGW30N60TPXKSA1 - Infineon

Description: IGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.

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PCB Footprints
IGW30N60TPXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO- 247-3
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3D Models
IGW30N60TPXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO- 247-3
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IGW30N60TPXKSA1 Details

  • Manufacturer Part Number:

    IGW30N60TPXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Collector Current-Max (IC):

    53 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    279 ns

  • Turn-on Time-Nom (ton):

    38 ns

IGW30N60TPXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IGW30N60TPXKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide a good thermal interface between the IGBT module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IGW30N60TPXKSA1 is between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IGW30N60TPXKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing. Consult the datasheet and application notes for more information on parallel operation.
  • The maximum allowable voltage transient for the IGW30N60TPXKSA1 is 600 V, as specified in the datasheet. However, it's recommended to limit the voltage transient to 550 V or less to ensure reliable operation and prevent damage to the device.

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